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ISPSD 2019 International Symposium on Power Semiconductor Devices and ICs , MAY 19-23
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The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place in Shanghai


Welcome to ISPSD 2019

The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) will take place in Shanghai, May 19-23, 2019. ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices, power integrated circuits, their hybrid technologies and applications. 

The conference rotates on a four-year cycle across the world. Shanghai is a beautiful city, one of the most cosmopolitan, diverse, dynamic, vibrant and fascinating cities in China. This is the first time that ISPSD is held in mainland China in its 31 years history.



Poster Session - 1: IC Design, SiC Packaging

Grand Ballroom 1

15:30 Tuseday, May 21, 2019



P1-8 SiC MOSFET with Integrated Zener Diode As an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection

Cheng-Tyng Yen, Fu-Jen Hsu, Kuo-ting Chu, Chien-Chung Hung, Lurng-Shehng Lee, Chwan-Ying Lee

Hestia-Power Inc.



Session 6   SiC MOSFET Ruggedness and Stability


Grand Ballroom 2+3+4

Wednesday, May 22, 2019



8:30 6-1 Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS

Fu-Jen Hsu, Cheng-Tyng Yen, Chien-Chung Hung, Kuo-Ting Chu, Lurng-Shehng Lee, Chwan-Ying Lee

Hestia-Power Inc.



More reference: http://www.ispsd2019.com/dct/page/1